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34mm2 DUV Photodiode with Ceramic Housing

DUV Photodiodes

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Stock #84-985 3-4 days
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£106.25
Qty 1-4
£106.25
Qty 5+
£95.20
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Specifications

General

Rise Time (μs):
1 @ 0 V, 1 kΩ

Physical & Mechanical Properties

Size of Active Area (mm):
5.8 x 5.8
Active Area (mm2):
34.0

Optical Properties

Peak Response Wavelength (nm):
980.00

Electrical

Responsivity @ 980nm (A/W):
0.5
Shunt Resistance @ V=-10mV (GΩ):
Minimum: 0.1
Typical: 0.4
Responsivity @ 633nm (A/W):
0.34
Responsivity @ 200nm (A/W):
0.12
Capacitance @ VR=0V (pF):
380.00
Noise Equivalent Power NEP (W/ Hz1/2):
5.8 x 10-14 @ 0 V, 200nm
Maximum Reverse Voltage (V):
5.00

Hardware & Interface Connectivity

Connector:
Ceramic

Environmental & Durability Factors

Operating Temperature (°C):
-20 to +60
Storage Temperature (°C):
-20 to +80

Regulatory Compliance

RoHS:
Compliant
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Certificate of Conformance:
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Product Details

  • Excellent UV Sensitivity
  • High Shunt Resistance
  • Low Capacitance

DUV Photodiodes are ideal for a wide variety of applications, including UV spectrophotometry and analytical and medical instrumentation. DUV Photodiodes are designed for enhanced responsivity from 200 – 400nm, and with sensitivity extending down to 190nm. DUV Photodiodes feature quartz windows and either metal or ceramic housing. Models with suppressed NIR performance are also available.

Frequently Purchased Together

Resources

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FAQ

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Amplifiers

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Breakdown Voltage (BDV)

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Capacitance

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Dark Current

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Detectivity

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Fall Time

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Noise Equivalent Power (NEP)

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Photodiode

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Photosensitivity

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Photovoltaic Effect

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Quantum Efficiency (QE)

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Responsivity

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RMS Noise

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Shunt Resistance

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Silicon Detector

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Spectral Response

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Acceptance Angle

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Application Note

Basic Principles of Silicon Detectors

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Cut-Off Wavelength

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Cut-On Wavelength

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Dynamic Range

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